2121非凡

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete；；；；； ；；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；；；；； ；；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；；；；； ；；
4、Low conduction loss, low switching loss, high reliability；；；；； ；；
5、Use environmentally friendly materials and meet RoHS standards；；；；； ；；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；；；；； ；；
3、High voltage 650V；；；；； ；；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；；；；； ；；
5、The latest generation of micro trench design, a cost-effective product；；；；； ；；
SPECIFICATION

DGW50N65CTL0

Related new products

80A/1200V IGBT Discrete for Automotive PTC

C2&E3 IGBT Modules for Variable-frequency Drive

DFN1006-3L Package Small Signal Device

LFPAK56D MOSFET for Automotive

SKBPC75 High Current Three Phase Bridge Rectifiers

N40V SGT MOSFET for Automotive Motor Drives

N100V MOSFET for Automotive Electronic Applications

Optimization Design of Rectifier Bridge —— New Package GBU-L

1200V 80 mΩ SIC MOSFET

50uA SOD-523 Package Small Signal Zener Diode
网站地图