2121非凡

CN EN
Home
About Us
Newpros
650V Super Junction N-Channel MOSFET
650V Super Junction N-Channel MOSFET Back
 PDF

Introduction 1. The 650V series superjunction products designed by the special multi-layer epitepity process of Yangjie Technology can meet the application requirements of low conduction loss, low switching loss, EMI compatibility and different circuit topologies. The products have good performance of internal conduction resistance (Rdson) and gate charge (Qg), reduce conduction loss and switching loss. Lower switching noise and lower Trr improve system stability and performance.
2. Switch speed and EMI balance, lower Trr characteristics, suitable for charger, power adapter, TV power supply, industrial power supply and other fields, can also meet some half-bridge or various bridge circuit topology application requirements.
Features 1. Adopt the special multi-layer epitaxial process design of Yangjie Technology, with higher process stability and reliability, switching speed and EMI balance, lower Trr characteristics;
2. The series of products have the characteristics of low on-resistance, low gate charge, low on-loss and low switching loss;
3. To-252 /ITO-220AB package, with better calorific value characteristics.
SPECIFICATION
Related new products

DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB

New 100V 3.2mΩ SGT MOSFET for PD power supply

3GBJ Three-Phase Bridge Rectifier

IGBT high frequency series C1 module

N40V SGT MOSFET for Automotive Motor Drives

IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application

650V Super Junction N-Channel MOSFET

DFN1608 Package ESD Protection Device

P 40V Trench MOSFET for Load Switch Application

N60V SGT MOSFET
网站地图